Sudeshna Samanta
SudeshnaSamanta
Email: sudeshna.samanta@hpstar.ac.cn
Education:
2002-2010: Ph.D from Jadavpur University, Kolkata, India (Dept. of Condensed Matter Physics and Material Sciences, S. N. Bose National
Centre for Basic Sciences)
1998-2002: B.Sc and M.Sc from Calcutta University, Kolkata, India
Research interest:
To design in-situ experiments to study the effect of high pressure in temperature dependent structural, electronic and magnetic transport;
photoconductivity and impedance spectroscopy in nanowires (metal, insulator, semiconductor, or complex oxides).
Publications:
1. Sudeshna Samanta, A. K. Raychaudhuri, "Dynamic phase coexistence and non-Gaussian resistance fluctuations in VO2 near the metal-insulator transition", Phys Rev B 92, 195125 (2015)
2. SubarnaDatta, SudeshnaSamanta, Barnali Ghosh and A. K. Raychaudhuri, “Low-Frequency Resistance Fluctuations in a single nanowire (diameter ~ 45nm) of a complex oxide and its relation to magnetic transitions
and phase separation” Appl. Phys. Lett. 105, 073117 (2014) (1st and 2nd authors equally contributed).
3. Samik Roy Moulik, SudeshnaSamanta and Barnali Ghosh, “Photoresponse in thin films of WO3 grown by pulsed laser deposition”
Appl. Phys. Lett. 104, 232107 (2014).
4. K. Das, SudeshnaSamanta, A. K. Raychaudhuri, Prasant Kumar, and K. S. Narayan, “Large Photoresponsivity in a single Si
nanowire Metal-Semiconductor-Metal device”, IEEE Trans. on Electron Devices 61, 1444 (2014).
5. Nilotpal Ghosh, SudeshnaSamanta, Barnali Ghosh, “Observation of ZBCP above TC at Au/Y1Ba2Cu3O7- δHeterostructure with a
Nano Hole: Apossible evidence for the Cooper Pairs above TC", Journal of Superconductivity and Novel
Magnetism, DOI: DOI 10.1007/s10948-013-2402-2 (2013).
6. SudeshnaSamanta, K. Das, and A. K. Raychaudhuri, “Junction effect on transport properties of a single Si nanowire metal-
semiconductor-metal device”, IEEE Trans. On Nanotechnology 12, 1089 (2013);http://dx.doi.org/10.1109/TNANO.2013.2279838.
7. SudeshnaSamanta, K. Das, and A. K. Raychaudhuri, “Low-frequency flicker noise in a MSM device made with single Si
nanowire (diameter ≈ 50 nm)”, Nanoscale Research Lett. 8, 165 (2013).
8.SubarnaDatta, Sayan Chandra, SudeshnaSamanta, K. Das, H. Srikanth, and Barnali Ghosh, “Growth and Physical Property
Study of Single Nanowire (Diameter ∼45nm) of Half Doped Manganite”, Journal of Nanomaterials, Vol: 2013, Article ID
162315, http://dx.doi.org/10.1155/2013/162315
9. SudeshnaSamanta, A. K. Raychaudhuri and Ya. M. Mukhovskii, “Non-Gaussian resistance noise in the ferromagnetic insulating
state of a hole-doped manganite”, Physical Review B 85, 045127 (2012)
10. SudeshnaSamanta, and A. K. Raychaudhuri, “Noise probe explores the glassiness of Ferromagnetic Insulating (FMI) state in
manganites”, IEEE-Xplore, doi-10.1109/ICNF.2011.5994371, 468 (2011)
11. SudeshnaSamanta, M. VenkataKamalakar, and A. K. Raychaudhuri, “Investigation of Very low frequency noise in
ferromagnetic Nickel Nanowires (≥15 nm)”, Journal of Nanoscience and Nanotechnology, 9, 5243 (2009)
12. SudeshnaSamanta, A. K. Raychaudhuri and Joy Mitra, “Very low frequency resistance fluctuation in thin films of
La0.67Ca0.33MnO3 with quenched disorder”, Physical Review B 78, 014427 (2008)