E-mail: yanwei.huang@hpstar.ac.cn
Education
2007-2010 Ph.D Department of Materials Science, Fudan University, Shanghai, China
2000- 2007 M.Sc & B.Sc Physical Science & Technology College, Zhengzhou University,
Zhengzhou, Henan province, China
Research interests
High pressure effect on properties of low-dimensional MoS2 or graphene-related materials
The elemental phase study at ultrahigh static pressure
In-situ studies of structural, electronic and optical properties of nanosized metal oxide or doped metal
oxide materials at high pressure
Publications:
1. Yanwei Huang, Qun Zhang, Junhua Xi, Zhenguo Ji. “Transparent conductive p-type lithium-doped nickel oxide thin films deposited by pulsed plasma deposition”. Applied Surface Science, 2012, 258: 7435-7439.
2. Zhonghui Cui, Yanwei Huang, Xiangxin Guo “Electrochemical Properties SnO2 Thin-Film Anodes Improved by Introduction of Cu Intermediate and LiF Coating Layers, Electrochimica Acta,2012,60:7-12.
3.Yanwei Huang, Qun Zhang, Guifeng Li, Jiahan Feng, “Investigation on structural, electrical and optical properties of
tungsten-doped tin oxide thin films” Thin Solid Films, 2010, 518: 1892-1896.
4.Yanwei Huang,Dezeng Li,Jiahan Feng, et al. “Transparent conductive tungsten-doped tin oxide thin films synthesized by sol-gel technique on quartz substrates” Journal of Sol-gel Science and Technology. 2010, 54: 276-281.
5. G.F. Li, J. Zhou, Y.W. Huang, M. Yang, J.H. Feng, Q. Zhang. “Indium zinc oxide semiconductor thin films deposited
by dc magnetron sputtering at room temperature.” Vacuum, 2010, 85: 22-25.
6. Yanwei Huang, Qun Zhang, Guifeng Li, Ming Yang, “Tungsten-doped tin oxide thin films prepared by pulsed plasma deposition” Materials Characterization, 2009, 60: 415-419.
7.Yanwei Huang, Qun Zhang and Guifeng Li, “Transparent conductive tungsten-doped tin oxide polycrystalline films prepared on quartz substrates” Semicond. Sci. Technol. 2009, 24: 015003.
